A Modular High-Temperature Measurement Set-Up for Semiconductor Device Characterization

摘要

We demonstrate the capabilities of a high temperature measurement set-uprecently developed at our institute. It is dedicated to the characterization ofsemiconductor devices and test structures in the temperature range from roomtemperature up to 500 degrees C and higher. A detailed description of theexperimental aquipment is given. Its practical use is demonstrated by measuringtemperature-dependent charcteristics of silicon VDMOSFET and IGBT devices aswell as SiC-diodes. For the silicon devices, numerical simulations based onrecently developed high temperature physical models were also performed inorder to gain a deeper understanding of the measured data, together with arevalidation of the model parameters.